Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Patent
1993-08-02
1994-09-06
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
257660, H01L 2334, H01L 2504
Patent
active
053451058
ABSTRACT:
A shielding structure (10) and method of formation. The shielding structure (10) has a substrate (12). A first dielectric layer (14) overlies the substrate (12). A conductive layer (16) is formed overlying the dielectric layer (14), is patterned, and is etched to form electrically isolated conductive regions from conductive layer (16). The electrically isolated conductive regions have sidewalls and the etching of conductive layer (16) exposes portions of dielectric layer (14). The exposed portions of dielectric layer (14) are etched to form trenched portions of dielectric layer (14). A second dielectric layer (18) is formed overlying the electrically isolated conductive regions, including the sidewalls, and overlying the trenched portions to create recessed regions that separate the electrically isolated conductive regions. A shielding conductive layer (20) is formed overlying dielectric layer (18) and at least partially fills the recessed regions to shield the electrically isolated conductive regions from each another.
REFERENCES:
patent: 4796084 (1989-01-01), Kamasaki et al.
patent: 5100818 (1992-03-01), Arima et al.
patent: 5110762 (1992-05-01), Nakahara et al.
patent: 5164334 (1992-11-01), Mizushima
Thun, "Deposited, Noise-Reducing Ground Plane", IBM Technical Disclosure Bulletin vol. 10, No. 1, Jun. 1967.
Kosa Yasunobu
Sun Shih-Wei
Yeargain John R.
Clark S. V.
Hille Rolf
Motorola Inc.
Witek Keith E.
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