Structure for providing high resolution modulation of voltage po

Details Structure for providing high resolution modulation of voltage po Structure for providing high resolution modulation of voltage po

1991-08-30

1993-12-28

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257194, 257281, H01L 2978

Patent

active

052742555

ABSTRACT:
A structure for modulating electrostatic potential in the vicinity of a surface of a structure comprises: a substrate; a first electrically conductive layer having an exposed surface and made of a first electrically conducive material formed on the subrate, the first electrically conductive material disposed to being transformed into an electrically insulting material; an electrically insulating layer formed on the surface of the first layer from the first electrically conducive material; and a second layer of a second electrically conductive material formed on the substrate and contiguous with the insulating layer so that a voltage potential between said first and second layers provides an electrostatic interaction with the substrate.

REFERENCES:
patent: 3803461 (1974-04-01), Beneking
patent: 4511813 (1985-04-01), Pan
patent: 4611184 (1986-09-01), Kumar
patent: 4972237 (1990-11-01), Kawai
patent: 4977435 (1990-12-01), Yoshimura et al.
Gurvigch et al, `High Quality Refractory Jose, Msen Tunnel Junctions . . . `, Appl. Phys. Letts. 4265), Mar. 1, 1983, pp. 472-474.
Muller et al., Device Electronics for IC's, p. 496, 1986.

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