Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Patent
1992-09-08
1994-08-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
257175, 257603, H01L 2908, H01L 2944
Patent
active
053410050
ABSTRACT:
An integrated protective structure provides protection from electrostatic discharges of structures to an integrated circuit functionally connected to a certain external pin. The protective structure is formed in a single epitaxial tub and includes a triggering Zener diode and a vertical bipolar transistor. The collector region of the vertical bipolar transistor is connected to the pin and constitutes also one of the two terminal regions of the triggering Zener. Around the emitter region and separated therefrom by the smallest distance feasible, is an annular region, having a heavier doping than the base region of the transistor formed with the purpose of intercepting the avalanche current of the Zener junction and distributing it in a uniform manner into the base region of the vertical transistor as well as acting as a shield for eventual electrons moving from the emitter region toward the breakdown junction. Optionally, a further emitter region, may be formed in front of the collector/cathode region and connected to the annular region in order to create a lateral bipolar transistor which triggers-on during an electrostatic discharge; thus, reducing the ohmic drop through the protective structure and the breakdown voltage.
REFERENCES:
Goldthorp, D. C., Slutsky, E. B., "An Integrated Circuit Composite PNPN Diode." IEEE 1979, pp. 180-183.
Patent Abstracts of Japan, JP-A-62224960, vol. 12, No. 89, (E-592), 23 Mar. 1988.
Patent Abstracts of Japan, JP-A-61264754, vol. 11, No. 117, (E-498), 11 Apr. 1987.
Hardy David B.
Hille Rolf
SGS--Thomson Microelectronics S.r.l.
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