Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Patent
1998-06-01
2000-02-15
Williams, Alexander Oscor
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
257797, 257619, 257420, 257730, 257723, 257685, H01L 23538, H01L 2334
Patent
active
060256389
ABSTRACT:
Process for making an integrated circuit module and product thereof including a carrier supporting a plurality of precisely aligned semiconductor circuit chips having uniform thicknesses.
REFERENCES:
patent: 4489364 (1984-12-01), Chance et al.
patent: 4542397 (1985-09-01), Biegelsen et al.
patent: 4542695 (1985-09-01), Biegelsen et al.
patent: 4670770 (1987-06-01), Tai
patent: 4709468 (1987-12-01), Wilson
patent: 4783695 (1988-11-01), Eichelberger et al.
patent: 4884122 (1989-11-01), Eichelberger et al.
patent: 4933042 (1990-06-01), Eichelberger et al.
patent: 4941255 (1990-07-01), Bull
patent: 4949148 (1990-08-01), Bartelink
patent: 4954875 (1990-09-01), Clements
patent: 4967146 (1990-10-01), Morgan
patent: 5019535 (1991-05-01), Wojnarowski et al.
patent: 5023205 (1991-06-01), Reche
patent: 5034091 (1991-07-01), Trask et al.
patent: 5091330 (1992-02-01), Cambou et al.
patent: 5168344 (1992-12-01), Ehlert et al.
patent: 5200631 (1993-04-01), Austin et al.
patent: 5207866 (1993-05-01), Lue et al.
patent: 5229647 (1993-07-01), Gnadinger
patent: 5313097 (1994-05-01), Hai-Ali-Ahmadi et al.
patent: 5331203 (1994-07-01), Wojnarowski et al.
patent: 5353498 (1994-10-01), Fillion et al.
patent: 5355102 (1994-10-01), Kornrumpf et al.
patent: 5373627 (1994-12-01), Grebe
patent: 5397747 (1995-03-01), Angiulli et al.
patent: 5432681 (1995-07-01), Linderman
patent: 5532519 (1996-07-01), Bertin et al.
patent: 5567654 (1996-10-01), Beilstein, Jr. et al.
patent: 5716218 (1998-02-01), Farnworth et al.
patent: 5770884 (1998-06-01), Pogge et al.
patent: 5781031 (1998-07-01), Bertin et al.
patent: 5801452 (1998-09-01), Fornworth et al.
patent: 5814885 (1998-09-01), Pogge et al.
patent: 5866443 (1999-02-01), Pogge et al.
M. Vangbo et al.; Precise Mask Alignment to the Crystallographic Orientation of Silicon Wafers Using Wet Anistropic Etching; J. Micromech, Microeng. 6; (1996) pp. 279-284.
D. Sander et al.; Fabrication of Metalilc Microstructures by Electroplating Using Deep-Etched Silicon Molds; Journal of Microelectromechanical Systems; vol. 4, No. 2; Jun. 1995; pp. 81-86.
J. Talghader et al; Integration of Fluidically Self-Assembled Optoelectronic Devices Using a Silicon-Based Process; IEEE Photonics Technology Letters; vol. 7, No. 11, Nov. 1995; pp. 1321-1323.
H. Linde et al.; Wet Silicon Etching with Aqueous Amine Gallates; J. electrochem. Soc., vol. 139, No. 4, Apr. 1992; pp. 1170-1174.
M. Gdula, et al, "A 36-Chip Multiprocessor Multichip Module With The General Electric High Density Interconnect Technology" IEEE, vol. 91, pp. 727-730, 1991.
H. Linde, et al, "Wet Silicon Etching With Aqueous Amine Gallates" Jrl. Electrochemical Soc., vol. 139, #4. pp. 1170-1174, Apr. 1992.
Marketing Materials, "High Density Multichip Interconnect-Reliability Data" Hughes Microelectronic Circuits Division, A Subsidiary of GM Hughes Electronics, Newport Beach, CA 3 pages, post 1992.
R.J. Wojnarowski, et al. "Three Dimensional Hybrid Wafer Scale Integration Using the GE High Density Interconnect Technology" IEEE Confedrence on Wafer Scale Integration, Ses. 7,WSI Tech. 1-pp. 308-316 1993.
M. Despont, et al. "New Design of Micromachined Capacitive Force sensor" Jrl. of Micromechanics & Micrengineering Vol. 3, #4, pp. 239-242, Dec. 1993.
D. Sander, et al., "Fabricationof Metallic Microstructures by Electroplating Using Deep-Etched Silicon Molds Molds" IEE, Jrl. of Microelectromechanical Systems, Vol.4#2, pp. 81-86, Jun. 1995.
J. Talghader, et al., "Integration of Fluidically Self-Assembled Optoelectronic Devices Using a Silicon-Based Process" IEEE Photonics Technology Letters, vol. 7, No. 11, Nov. 1995.
J.P. Krusius, et al., "Tiled Silicon Report", pp.1-18, shows 040996.
Iyer Subramania S.
Pogge H. Bernhard
Abate Joseph P.
International Business Machines - Corporation
Williams Alexander Oscor
LandOfFree
Structure for precision multichip assembly does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure for precision multichip assembly, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure for precision multichip assembly will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1907971