Structure for phase change memory and the method of forming...

Details Structure for phase change memory and the method of forming... Structure for phase change memory and the method of forming...

2007-08-28

2007-08-28

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S005000

Reexamination Certificate

active

10966335

ABSTRACT:
A phase change device includes a first contact electrode structure a phase change material and a first insulating material between the phase change material and the first contact electrode structure and a second contact electrode in contact with the phase change material. A contact structure formed in the first insulating material between the first contact electrode structure and the phase change material is also included. The contact structure is formed by an insulating material breakdown process. A method of forming a phase change device is also described.

REFERENCES:
patent: 6031287 (2000-02-01), Harshfield
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 2005/0032319 (2005-02-01), Dodge

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