Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Reexamination Certificate
2011-03-01
2011-03-01
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
C257S565000, C257SE29174, C438S309000
Reexamination Certificate
active
07898061
ABSTRACT:
A method of forming a semiconductor device having two different strains therein is provided. The method includes forming a strain in a first region with a first straining film, and forming a second strain in a second region with a second straining film. Either of the first or second strains may be either tensile or compressive. Additionally the strains may be formed at right angles to one another and may be additionally formed in the same region. In particular a vertical tensile strain may be formed in a base and collector region of an NPN bipolar transistor and a horizontal compressive strain may be formed in the extrinsic base region of the NPN bipolar transistor. A PNP bipolar transistor may be formed with a compression strain in the base and collector region in the vertical direction and a tensile strain in the extrinsic base region in the horizontal direction.
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Office Action of U.S. Appl. No. 11/760,288.
Dunn James S.
Harame David L.
Johnson Jeffrey B.
Joseph Alvin J.
Canale Anthony
International Business Machines - Corporation
Kraig William F
Le Thao X
Roberts Mlotkowski Safran & Cole P.C.
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