Structure for packaging focal plane imagers and signal processin

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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357 31, 357 32, 357 24LR, 357 40, 357 45, 357 20, 250332, 250330, 250370, H01L 2714

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active

046600663

ABSTRACT:
An image focal plane array is disclosed including a first substrate having a first surface containing image detection elements that are interconnected to metallized layers on the opposite surface. The first substrate area is located above a second semiconductor substrate containing elevated portions that are metal coated and contacting the metallized portions on the opposite surface of the the first substrate to provide for electrical interconnection with the detection elements on the first substrate. A second structure is also illustrated which includes the image focal point array located on a cold finger and adjacent to the image focal plane array on the same cold finger is a stack of at least two silicon substrates containing support circuitry for the focal plane array. The circuitry on these semiconductor substrate stacks are interconnected by having at least one of the substrates including elevated portions to provide electrical interconnection between the two or more stack substrates.

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Kohn et al., "1-2 Micron (Hg, Cd) Te Photodetectors," IEE Transactions on Electron Devices, vol. ED-16, No. 10, Oct. 1969, pp. 885-890.

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