Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2005-07-26
2008-03-04
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S029000, C438S032000, C257SE33068
Reexamination Certificate
active
07338825
ABSTRACT:
Provided are a structure for an optical device and method of fabricating the same. The structure includes: a light scattering layer producing nanoparticles due to externally provided thermal energy; a protective layer protecting the light scattering layer; and a capping layer disposed between the light scattering layer and the protective layer. As the light scattering layer is formed of nitride-oxide, an energy gap is increased to make the structure suitable for a high-speed electronic circuit, and a desired stoichiometric ratio can be easily obtained. Also, the capping layer prevents crystalline mismatch, thus the non-uniformity of elements is inhibited to maintain a stoichiometric state. As a result, a high-integrated high-speed electronic circuit, which is excellent in uniformity and reproducibility, can be easily embodied.
REFERENCES:
patent: 5258630 (1993-11-01), Toyama et al.
patent: 6188084 (2001-02-01), Kerber et al.
patent: 6781160 (2004-08-01), Tsai et al.
patent: 6903505 (2005-06-01), McNulty et al.
patent: 7012363 (2006-03-01), Weaver et al.
patent: 2003/0111955 (2003-06-01), McNulty et al.
patent: 2003/0127973 (2003-07-01), Weaver et al.
patent: 2003/0136440 (2003-07-01), Machida et al.
patent: 2003/0184219 (2003-10-01), Duggal et al.
patent: 2004/0046497 (2004-03-01), Schaepkens et al.
patent: 2004/0061107 (2004-04-01), Duggal
patent: 2006/0197413 (2006-09-01), Takeuchi et al.
patent: 10-0421147 (2004-02-01), None
patent: 10-2004-0030359 (2004-04-01), None
patent: WO 2004/088644 (2004-10-01), None
Applied Physics Letters, vol. 78, No. 1, Jan. 1, 2001, pp. 99-101.
Applied Physics Letters, vol. 78, No. 17, Apr. 23, 2001, pp. 2417-2419.
Applied Physics Letters, vol. 78, No. 6, Feb. 5, 2001, pp. 790-792.
Juni Tominaga, “The application of silver oxide thin films to plasmon photonic devices”, Institute of Physics Publishing, Journal of Physics Condensed Matter, vol. 15, No. 25, Jul. 2, 2003, pp. R1001-R1122, XP002446478, ISSN: 0953-8984.
Kim Hye Jin
Kim Ki Chul
Kim Sang Hyeob
Blakely & Sokoloff, Taylor & Zafman
Electronics And Telecommunications Research Institute
Toledo Fernando L.
LandOfFree
Structure for optical device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure for optical device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure for optical device and method of fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3968976