Structure for low capacitance ESD robust diodes

Details Structure for low capacitance ESD robust diodes Structure for low capacitance ESD robust diodes

2008-05-12

2010-10-26

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S594000, C257S605000, C257SE27016

Reexamination Certificate

active

07821099

ABSTRACT:
A diode having a capacitance below 0.1 pF and a breakdown voltage of at least 500V. The diode has an anode of a first conductivity type and a cathode of a second conductivity type disposed below the anode. At least one of the cathode and anode have multiple, vertically abutting diffusion regions. The cathode and anode are disposed between and bounded by adjacent isolation regions.

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