Structure for inhibiting forward bias beta degradation

Details Structure for inhibiting forward bias beta degradation Structure for inhibiting forward bias beta degradation

1984-06-29

1986-03-18

James, Andrew J.

357 65, 357 67, 357 71, 357 34, H01L 2952, H01L 2954, H01L 2350

Patent

active

045772126

ABSTRACT:
An emitter contact structure is disclosed for alleviating forward bias beta degradation in a bipolar transistor. The structure comprises emitter contact metallurgy which travels over a dielectric insulating layer having an area of increased thickness adjacent to the area of contact between the metallurgy and the emitter.

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Journal of Applied Physics, vol. 53, No. 6, 1982, pp. 4456-4462.

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