Coherent light generators – Particular active media – Semiconductor
Patent
1992-01-21
1993-06-22
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
052220915
ABSTRACT:
A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially through the buffer layer. The active and cap layers a laterally etched and a semi-insullating material is overlayed the sidewalls. A further etching leaves a thin wall of the semi-insulating material surrounding the active layer. 1.3 .mu.m InGaAsP lasers with 3 dB bandwidths of 24 GHz and intrinsic resonance frequencies in excess of 22 GHz have been successfully fabricated. This is the highest bandwidth ever reported for a semiconductor laser, and the highest resonance frequency for InGaAsP lasers. Excellent modulation efficiencies are observed to high frequencies.
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Holmstrom Roger P.
Meland Edmund
Powazinik William
Epps Georgia Y.
GTE Laboratories Incorporated
Lohmann, III Victor F.
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