Structure for fabrication of a CCD image sensor

Details Structure for fabrication of a CCD image sensor Structure for fabrication of a CCD image sensor

1993-01-29

1994-01-04

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, H01L 29796

Patent

active

052763412

ABSTRACT:
The present invention relates to a structure and a method for fabrication of a CCD image sensor having a structure that a p-type epitaxial layer is formed on an n-type substrate to reduce a smear noise and an n-type region for controlling an OFD voltage which is disposed between an n-type substrate beneath an n-type photo diode and a p-type epitaxial layer and a p.sup.+ -type region for reducing the smear phenomenon which is deposed between an n-type substrate beneath an n-type BCCD and a p-type epitaxial layer. According to this improved structure and method, it can be fabricated of a CCD image sensor easily and rapidly and with reduced smear noise.

REFERENCES:
patent: 4460912 (1984-07-01), Takeshita et al.
patent: 4527182 (1985-07-01), Ishihara et al.
patent: 4630091 (1986-12-01), Kuroda et al.
patent: 4672455 (1987-06-01), Miyatake
patent: 4851890 (1989-07-01), Miyatake
patent: 4951148 (1990-08-01), Esser et al.
patent: 4977584 (1990-12-01), Kohno et al.

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