Structure for connecting flat type semiconductor switches in par

Details Structure for connecting flat type semiconductor switches in par Structure for connecting flat type semiconductor switches in par

1995-03-23

1997-01-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257277, 257587, 257696, 257724, 257773, 257785, H01L 2348, H01L 29417

Patent

active

055919936

ABSTRACT:
A connection structure for connecting a plurality of semiconductor switches in parallel includes a pressed contact for a semiconductor switch. The pressed contact includes a layered structure which connects a drain conductor to a plurality of drain electrodes, a source conductor to a plurality of source electrodes, a gate conductor to a plurality of gate electrodes, and an insulating film between the gate conductor and the source conductor. The gate electrodes are a plurality of resilient elastic wings which are pressed upward against the gate conductor, thereby ensuring a good electrical connection.

REFERENCES:
patent: 3105922 (1963-10-01), Fukui
patent: 4516149 (1985-05-01), Wakui
patent: 4612561 (1986-09-01), Kimura et al.
patent: 5132896 (1992-07-01), Nishizawa et al.
RCA Tech. Notes No. 85 Oct. 16 1969 Denning.

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