Structure for and method of manufacturing a semiconductor device

Metal working – Method of mechanical manufacture – Assembling or joining

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29577R, 29571, 29576R, H01L 2704

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043887554

ABSTRACT:
A structure and method for manufacturing semiconductor devices by the master slice method, in which various kinds of semiconductor devices are manufactured through utilization of a common master pattern and a plurality of different kinds of selective wiring patterns. A number of bipolar transistors each having plural emitter regions, is formed in a predetermined region, or portion, of a semiconductor substrate by employing a common master pattern, and the plural emitter regions of the respective bipolar transistors are selectively connected by the associated wiring patterns of each thereof to form corresponding bipolar transistors of different, predetermined D.C. characteristics. When manufacturing many different kinds of semiconductor devices by the master slice method, the area which would be wasted on the semiconductor substrate by prior art techniques is greatly reduced, thus providing for enhanced area efficiency.

REFERENCES:
patent: 3747088 (1973-07-01), Pastoriza
patent: 3884732 (1975-05-01), Baitinger
patent: 3995304 (1976-11-01), Pease

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