Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-11-21
2006-11-21
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S347000, C257S414000, C257S428000, C257S431000, C257S655000, C257S656000, C257SE31061
Reexamination Certificate
active
07138697
ABSTRACT:
The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surface electrodes. The device achieves high bandwidth by utilizing a buried insulating layer to isolate carriers generated in the underlying substrate, high quantum efficiency over a broad spectrum by utilizing a Ge absorbing layer, low voltage operation by utilizing thin a absorbing layer and narrow electrode spacings, and compatibility with CMOS devices by virtue of its planar structure and use of a group IV absorbing material. The method for fabricating the photodetector uses direct growth of Ge on thin SOI or an epitaxial oxide, and subsequent thermal annealing to achieve a high-quality absorbing layer. This method limits the amount of Si available for interdiffusion, thereby allowing the Ge layer to be annealed without causing substantial dilution of the Ge layer by the underlying Si.
REFERENCES:
patent: 4300152 (1981-11-01), Lepselter
patent: 4722910 (1988-02-01), Yasaitis
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 2002/0094663 (2002-07-01), Kwon et al.
patent: 2003/0102469 (2003-06-01), Jones et al.
patent: 2003/0141565 (2003-07-01), Hirose et al.
Wolf, “Silicon Processing for the VLSI Era, vol. 2—Process Integration,” 1990, Lattice Press, p. 12-13.
Oh, J, et al. “Interdigitated Ge p-i-n Photodetectors Fabricated on a Si Substrate Using Graded SiGe Buffer Layers.”IEEE Journal of Quantum Electronicsvol. 38 No. 9 (Sep. 2002).
Jones, R. et al. “Fabrication and Modeling of Gigahertz Photodetectors in Heteroepitaxial Go-on Si Using a Buffer Layer Deposited by Low Energy Plasma Enhanced CVD.”IEDMp793-796 (Dec. 2002).
Chu Jack O.
Dehlinger Gabriel K.
Grill Alfred
Koester Steven J.
Ouyang Qiging
Flynn Nathan J.
Quinto Kevin
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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