Structure for an antifuse cell

Details Structure for an antifuse cell Structure for an antifuse cell

1996-04-16

2000-07-11

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

H01L 2900

Patent

active

060877073

ABSTRACT:
A structure for an antifuse cell which comprises: (a) field oxide between the bottom plate of the antifuse element and its access transistor; and (b) an implanted region underlying the antifuse element to provide a conductive path between the source of the access transistor and the antifuse element.

REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4424578 (1984-01-01), Miyamoto
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4605872 (1986-08-01), Rung
patent: 5086331 (1992-02-01), Hartgring et al.
patent: 5316971 (1994-05-01), Chiang et al.
patent: 5619063 (1997-04-01), Chen et al.
patent: 5682049 (1997-10-01), Nguyen

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