Structure for amorphous carbon based non-volatile memory

Details Structure for amorphous carbon based non-volatile memory Structure for amorphous carbon based non-volatile memory

2006-06-07

2009-11-17

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, active junction...

C257S002000, C257S042000, C257S295000, C257S530000

Reexamination Certificate

active

07619247

ABSTRACT:
A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at least one second memory elements.

REFERENCES:
patent: 6482741 (2002-11-01), Ueno
patent: 6486065 (2002-11-01), Vyvoda et al.
patent: 6511645 (2003-01-01), Nesbitt et al.
patent: 6642107 (2003-11-01), Seo et al.
patent: 6649969 (2003-11-01), Tsuji et al.
patent: 6683322 (2004-01-01), Jackson et al.
patent: 6689644 (2004-02-01), Johnson
patent: 6777773 (2004-08-01), Knall
E. G. Gerstner et al. —“Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films,” Journal of Applied Physics, vol. 84, No. 10, Nov. 15, 1998, pp. 5647-5651.

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