Structure for amorphous carbon based non-volatile memory

Details Structure for amorphous carbon based non-volatile memory Structure for amorphous carbon based non-volatile memory

2007-10-30

2007-10-30

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is selenium or tellurium in elemental form

C257S002000, C257S296000

Reexamination Certificate

active

10921098

ABSTRACT:
A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at least one second memory elements.

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E. G. Gerstner et al.—“Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films,” Journal of Applied Physics, vol. 84, No. 10, Nov. 15, 1998, pp. 5647-5651.

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