Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1994-06-29
1995-05-30
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250423R, 250396R, H01J 3700
Patent
active
054204151
ABSTRACT:
A structure and method of accurately positioning and aligning an extraction member aperture (arc slit) and an extraction electrode gap with a predetermined beam line in an ion implantation apparatus is disclosed. The extraction member aperture is positioned with respect the ion beam source housing thereby eliminating cumulative tolerance errors which plague prior art ion implantation apparatuses. A removable alignment fixture is used in conjunction with a self-centering clamping assembly to accurately position the extraction member aperture in alignment with the predetermined beam line. The extraction member is secured to a support ring of the clamping assembly and the clamping assembly is mounted to the alignment fixture. The alignment fixture is mounted to the source housing precisely aligning the extraction member aperture with the predetermined beam line. The split ring of the clamping assembly is secured to a support tube surrounding the ion generating arc chamber. Since the clamping assembly is self centering, the alignment of the extraction member aperture is not compromised. The alignment fixture is then removed. After removal of the alignment fixture, a variable gap extraction electrode assembly is secured to the source housing. A machining fixture is used during fabrication and assembly of the extraction electrode assembly to insure that the electrode gap is aligned with the predetermined beam line when the extraction electrode assembly is mounted to the source housing.
REFERENCES:
patent: 3723785 (1973-03-01), Nixon et al.
patent: 4580058 (1986-04-01), Mears et al.
patent: 4714834 (1987-12-01), Shubaly
patent: 4847504 (1989-07-01), Aitken
patent: 4883968 (1989-11-01), Hipple et al.
patent: 4985634 (1991-01-01), Seengl et al.
patent: 5300785 (1994-04-01), Aitken
Berman Jack I.
Beyer James
Eaton Corporation
LandOfFree
Structure for alignment of an ion source aperture with a predete does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure for alignment of an ion source aperture with a predete, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure for alignment of an ion source aperture with a predete will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-364223