Coating processes – Direct application of electrical – magnetic – wave – or... – Electrostatic charge – field – or force utilized
Reexamination Certificate
2009-07-10
2011-10-04
Parker, Frederick (Department: 1715)
Coating processes
Direct application of electrical, magnetic, wave, or...
Electrostatic charge, field, or force utilized
C427S458000, C427S472000
Reexamination Certificate
active
08029869
ABSTRACT:
Techniques for fabricating a structure from nanoparticles are generally described. Some example techniques are methods for fabricating an apparatus from nanoparticles. Example methods may include providing nanoparticles that are electrically charged with a first polarity and collecting the nanoparticles on a particle collection device having a second polarity opposite the first polarity. The nanoparticles can then be transferred onto a base structure from the particle collection device.
REFERENCES:
patent: 5512131 (1996-04-01), Kumar et al.
patent: 6458426 (2002-10-01), Bulovic et al.
patent: 2005/0064618 (2005-03-01), Brown et al.
patent: 2006/0093749 (2006-05-01), Kim et al.
patent: 2006/0211327 (2006-09-01), Lee et al.
patent: 2009/0074950 (2009-03-01), Sinha
patent: 2432257 (2007-05-01), None
patent: 2005104750 (2005-04-01), None
Dahl-Young Khang, et al “A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates” Science 311, 208, Jan. 13, 2006; DOI: 10.1126/science.1121401 pp. 208-212.
International Search Report and Written Opinion from International Application No. PCT/KR2010/004361 dated Sep. 30, 2010.
Korea University Research and Business Foundation
Parker Frederick
Workman Nydegger
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