Structure containing hydrogenated amorphous silicon and process

Details Structure containing hydrogenated amorphous silicon and process Structure containing hydrogenated amorphous silicon and process

1986-07-17

1988-05-03

Kittle, John E.

Stock material or miscellaneous articles

Composite

Of silicon containing

428448, 357 2, 357 237, B32B 904, H01L 4500, H01L 2978

Patent

active

047419644

ABSTRACT:
A structure containing a substrate having a first hydrogenated amorphous silicon layer thereon and a second hydrogenated amorphous silicon layer located above the first layer. The two hydrogenated amorphous silicon layers differ from each other in the concentration of hydrogen contained therein. In addition, a process for fabricating such a structure is provided.

REFERENCES:
patent: 4285762 (1981-08-01), Moustakas
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4540647 (1985-09-01), Borsenberger
patent: 4624737 (1986-11-01), Shimbo
H. F. Bare et al., "Etching Patterns in Amorphous Silicon", J. Vac. Sci. Technol. A4 (2), Mar./Apr. 1986, pp. 239-241.
T. L. Chu et al., "Chemical Etching for the Evaluation of Hydrogenated Amorphous Silicon Films", Appl. Phys. Lett. 48(26), 6/30/86, pp. 1783-1784.

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