Structure comprising platinum layer bound to a surface of a sili

Details Structure comprising platinum layer bound to a surface of a sili Structure comprising platinum layer bound to a surface of a sili

1994-09-08

1999-10-19

Whitehead Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257743, 257744, 257748, 257761, 257763, 257766, 257768, 257769, H01L 2348, H01L 2352, H01L 2940

Patent

active

059694190

ABSTRACT:
By treating the silicon-oxide insulating layer of a semiconductor device with an aqueous metal-salt solution of a metal of an ion radius of less than 0.110 nm, for example, Sc, La or Zr, before a platinum electrode layer is provided on the insulating layer, the platinum layer shows excellent adhesive properties.

REFERENCES:
patent: 3629022 (1971-12-01), Terry
patent: 4471405 (1984-09-01), Howard et al.

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