Structure combining an IC integrated substrate and a...

Details Structure combining an IC integrated substrate and a... Structure combining an IC integrated substrate and a...

2006-09-20

2009-06-09

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S758000, C257SE21584

Reexamination Certificate

active

07545042

ABSTRACT:
The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The interface between the IC integrated substrate and the carrier has a specific area at which the interface adhesion is different from that at the remaining area of the interface. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electronic devices using the above structure.

REFERENCES:
patent: 5708302 (1998-01-01), Azuma et al.
patent: 6028364 (2000-02-01), Ogino et al.
patent: 6214733 (2001-04-01), Sickmiller
patent: 6962835 (2005-11-01), Tong et al.
patent: 1690820 (2005-11-01), None

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