Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2011-05-24
2011-05-24
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C257SE21237
Reexamination Certificate
active
07947573
ABSTRACT:
The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The IC integrated substrate has a first dielectric layer attached to the carrier. The materials of the carrier and the first dielectric layer are selected to prevent the IC integrated substrate from peeling off the carrier during processing and to allow the IC integrated substrate to naturally separate from the carrier after being cut, through the adhesion between the carrier and the first dielectric layer. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electrical devices using the above structure.
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Princo Corp.
Thomas Toniae M
Wilczewski Mary
LandOfFree
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