Structure combining an IC integrated substrate and a...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

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Details

C438S113000, C438S463000, C438S464000, C257SE23001, C257SE21499, C257SE33056

Reexamination Certificate

active

07993973

ABSTRACT:
The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The interface between the IC integrated substrate and the carrier has a specific area at which the interface adhesion is different from that at the remaining area of the interface. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electronic devices using the above structure.

REFERENCES:
patent: 6028364 (2000-02-01), Ogino et al.
patent: 6214733 (2001-04-01), Sickmiller
patent: 6391220 (2002-05-01), Zhang et al.
patent: 6504105 (2003-01-01), Acocella et al.
patent: 6962835 (2005-11-01), Tong et al.
patent: 7381285 (2008-06-01), Kanoh et al.
patent: 2003/0170965 (2003-09-01), Kondo
patent: 2003/0219969 (2003-11-01), Saito et al.
patent: 2006/0252182 (2006-11-01), Wang et al.
patent: 2007/0164424 (2007-07-01), Dean et al.
patent: 2008/0185700 (2008-08-01), Takamatsu et al.
patent: 1690820 (2005-11-01), None
patent: 1720766 (2006-01-01), None
patent: 1411547 (2004-04-01), None
patent: 1801870 (2007-06-01), None
patent: 2002009202 (2002-01-01), None
patent: 2002110948 (2002-04-01), None
patent: 2004087701 (2004-03-01), None
patent: 2006269994 (2006-10-01), None
patent: 2007158174 (2007-06-01), None

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