Structure capable of forming a diode and associated conductive p

Electrical resistors – Incased – embedded – or housed – Element in insulation with outer metallic sheath

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338 20, 340173SP, 357 1, 357 45, 357 72, H01L 2704, H01L 4500

Patent

active

039900983

ABSTRACT:
A diode-forming layered structure comprising a semiconductor body having a layered coating thereon, said semiconductor having a surface region of given conductivity type, said coating being a dispersed metal particle-polymer coating which before electrical activation displays a high electrical resistance but after electrical activation is highly conductive, said electrical activation resulting in the formation of a diode in the zone of contact between the coating and the semiconductor body, a plurality of such layered structures, in a two-dimensional array based on a common semiconductor body, being useful in the formation of a read-only memory (ROM), an alterable read-only memory (AROM) or a random access memory (RAM).

REFERENCES:
patent: 3407495 (1968-10-01), Montgomery
patent: 3685026 (1972-08-01), Wakabayashi et al.
patent: 3685028 (1972-08-01), Wakabayashi et al.
patent: 3699543 (1972-10-01), Neale
patent: 3766096 (1973-10-01), Mastrangelo
patent: 3864715 (1975-02-01), Mastrangelo

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