Structure and technique for achieving reduced inductive effect o

Details Structure and technique for achieving reduced inductive effect o Structure and technique for achieving reduced inductive effect o

1977-11-21

1979-09-18

Wojciechowicz, Edward J.

357 68, 357 80, H01L 2702

Patent

active

041685075

ABSTRACT:
An RF power transistor device, or package, which includes a transistor, a capacitor, an electrically insulating but thermally conducting substrate, a metallic ground lead member on the substrate having input output and common portions, a heat sink on which the substrate is mounted and, input and output microstrip conductor means mounted on the heat sink has the common lead inductive effect of at least one component of common lead inductance of the transistor reduced by tightly coupling the input ground current and the input current as by a film of dielectric material such as Kapton or Teflon of about one half mil in thickness. Alternatively the output current and the output ground current may be tightly coupled.

REFERENCES:
patent: 3825805 (1974-07-01), Belohoubeck et al.
patent: 3969752 (1976-07-01), Martin et al.
patent: 4042952 (1977-08-01), Kraybill

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