Structure and process for millimetric wave sources integrated in

Details Structure and process for millimetric wave sources integrated in Structure and process for millimetric wave sources integrated in

1976-09-29

1978-11-28

Smith, Alfred E.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 29591, 333 95R, 333 97R, 333 98R, H01P 1100, H01P 300, H01L 2120, H01L 2350

Patent

active

041269322

ABSTRACT:
A structure consisting of a semiconductive device e.g. an IMPATT diode destined to transmit high frequency electromagnetic waves through a radial waveguide integral with the structure, forming a "easy to handle" unit. A fabrication process allowing a large number of units to be made utilizing batch processing techniques, is provided. The process includes forming a plurality of mesa diodes on a semiconductor wafer, coating the wafer with a first insulating layer (filling the intervals between the mesa tables), then depositing on the wafer a plate of a solid dielectric with openings for access to the upper part of diodes. The diodes are spaced enough to allow forming around each of them a radial waveguide using a portion of the solid dielectric for propagation medium and for walls, on one hand a metallization extending the biassing electrodes of the upper parts of diode, and on the other hand, a metallic base supporting the assembly after grinding of the substrate of the wafer. The diameter of the radial waveguide is of the order of one wavelength, measured in the solid medium.

REFERENCES:
patent: 3675314 (1972-07-01), Levi
patent: 3689993 (1972-09-01), Tolar
patent: 3701049 (1972-10-01), Van Iperen et al.
patent: 3718869 (1973-02-01), Gerlach
patent: 3842361 (1974-10-01), Quirk
patent: 3874918 (1975-04-01), Nechtow et al.

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