Structure and process for a capacitor and other devices

Details Structure and process for a capacitor and other devices Structure and process for a capacitor and other devices

2005-06-07

2005-06-07

Lebentritt, Michael S. (Department: 2829)

Semiconductor device manufacturing: process

Making passive device

C438S399000, C257S532000, C257S535000

Reexamination Certificate

active

06902981

ABSTRACT:
A structure and method of fabrication of a capacitor and other devices by providing a semiconductor structure and providing a top insulating layer and conductive features over the semiconductor structure; forming a first conductive layer over the top insulating layer; patterning the first conductive layer to form at least a capacitor bottom plate and a first portion of the first conductive layer; forming a capacitor dielectric layer over the top insulating layer and the capacitor bottom plate and the first portion of the first conductive layer; forming a second conductive layer over the capacitor dielectric layer; and patterning the second conductive layer to form at least a top plate over the bottom plate and a first section of the second conductive layer on the capacitor dielectric layer. The embodiment can further comprise conductive features in the top insulating layer that can underlie the bottom plate, the first portion or/and the first section. The first portion and the first section can form resistors, capacitors or other devices.

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Zurcher, et al. , Integration of thin film MIM capacitors and resistors into Copper Metallization based RF-CMSO and Bi-cmos Technologies, IEDM 00-0153 to 156, 2000.

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