Structure and method of sub-gate NAND memory with bandgap...

Details Structure and method of sub-gate NAND memory with bandgap... Structure and method of sub-gate NAND memory with bandgap...

2011-05-24

2011-05-24

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185280, C365S185290, C257S321000

Reexamination Certificate

active

07948799

ABSTRACT:
A bandgap engineered SONOS device structure for design with various AND architectures. The BE-SONOS device structure comprises a spacer oxide disposed between a control gate overlaying an oxide-nitride-oxide-nitride-oxide stack and a sub-gate overlaying a gate oxide. In one example, a BE-SONOS sub-gate-AND array architecture has multiple strings of SONONOS devices with sub-gate lines and diffusion bit lines. In another example, a BE-SONOS sub-gate-AND architecture has multiple strings of SONONOS devices with sub-gate lines, relying on the sub-gate lines that create inversions to substitute for the diffusion bit lines.

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