Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-02-20
2007-02-20
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S782000, C257SE21568
Reexamination Certificate
active
10964614
ABSTRACT:
A method of manufacturing a structure in which a substrate can be removed easily from a structure that has been formed on the substrate by using a film forming technology. The method of manufacturing a structure includes the steps of (a) forming an intermediate layer on a substrate; (b) forming a structure including a brittle material layer on the intermediate layer by at least using a spray deposition method of spraying material powder toward the substrate, on which the intermediate layer is formed, to deposit the material powder; and (c) removing the substrate from the structure.
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patent: 2005/0046312 (2005-03-01), Miyoshi
patent: 2003-34003 (2003-02-01), None
patent: 2003-215256 (2003-07-01), None
Miyoshi Tetsu
Nakamura Takashi
Fuji Photo Film Co. , Ltd.
Tsai H. Jey
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