Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-08-29
2006-08-29
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE25011
Reexamination Certificate
active
07098477
ABSTRACT:
The present invention provides a device structure and method of forming a finFet device having stacked fins. The method of the present invention comprises: providing a substrate with a first semiconductor layer on a first insulator layer, a second insulator layer on the first semiconductor layer, and a second semiconductor layer on the second insulator layer; forming a first fin and a second fin in the second semiconductor layer; masking the first fin; and forming a third fin in the first semiconductor layer, where the second fin is stacked on the third fin. The structure of the present invention comprises: a semiconductor substrate having a first semiconductor layer on a first insulator layer, a second insulator layer on the first semiconductor layer, and a second semiconductor layer on the second insulator layer; a first and second fin formed in the second semiconductor layer; and a third fin formed in the first semiconductor layer, where the second fin is stacked on the third fin.
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Doris Bruce B.
Zhu Huilong
Abate Joseph P.
Bilak Mark
Chaudhari Chandra
Such Matthew W.
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