Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2011-04-12
2011-04-12
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257SE23062, C257SE23173
Reexamination Certificate
active
07923828
ABSTRACT:
An interconnect element is provided which includes a dielectric element having a first major surface, a second major surface remote from the first major surface, and a plurality of recesses extending inwardly from the first major surface. A plurality of metal traces are embedded in the plurality of recesses, the metal traces having outer surfaces substantially co-planar with the first major surface and inner surfaces remote from the outer surfaces. A plurality of posts extend from the inner surfaces of the plurality of metal traces through the dielectric element, the plurality of posts having tops exposed at the second major surface. A multilayer wiring board including a plurality of such interconnect elements is also provided, as well as various methods for making such interconnect elements and multilayer wiring boards.
REFERENCES:
patent: 5011580 (1991-04-01), Pan et al.
patent: 5118385 (1992-06-01), Kumar et al.
patent: 5440805 (1995-08-01), Daigle et al.
patent: 6262376 (2001-07-01), Hurwitz et al.
patent: 6262478 (2001-07-01), Hurwitz et al.
patent: 6280640 (2001-08-01), Hurwitz et al.
patent: 6780673 (2004-08-01), Venkateswaran
patent: 6838763 (2005-01-01), Ahn et al.
patent: 7052932 (2006-05-01), Huang et al.
patent: 2002/0074641 (2002-06-01), Towle et al.
patent: 2004/0000425 (2004-01-01), White et al.
Marriam—Webster's Colleciate Dictionary 10th edition, 1993, p. 891.
Partial International Search Report, PCT/US2005/035459, Dated Mar. 30, 2006.
Endo Kimitaka
Masuda Norihito
Shimada Tomokazu
Lerner David Littenberg Krumholz & Mentlik LLP
Sandvik Benjamin P
Soderholm Krista
Tessera Interconnect Materials, Inc.
LandOfFree
Structure and method of making interconnect element, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure and method of making interconnect element, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method of making interconnect element, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2626162