Structure and method of making Alpha-Ta in thin films

Details Structure and method of making Alpha-Ta in thin films Structure and method of making Alpha-Ta in thin films

1993-01-15

1994-01-25

Robinson, Ellis P.

Stock material or miscellaneous articles

Composite

Of metal

428469, 428472, 428698, 428704, 428938, 20419215, 20419217, 20419221, 36305, 501134, B32B 1504

Patent

active

052814858

ABSTRACT:
The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.

REFERENCES:
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patent: 4251326 (1981-02-01), Arcidiacono et al.
patent: 4364099 (1982-12-01), Koyama et al.
R. Petrovic et al., "Electrical and Structural Properties of Tantalum Nitride Films Deposited by Sputtering," Thin Solid Films, vol. 57, pp. 333-336 (1979).
L. I. Maissel, et al., "Handbook of Thin Film Technology," McGraw-Hill, Inc., pp. 18-12 to 18-13 (1970).
L. G. Feinstein, et al., "Factors Controlling the Structure of Sputtered Ta Films," Thin Solid Films, vol. 16, pp. 129-145 (1973).
N. Schwartz, et al., "Impurity Effects in the Nucleation of Alpha (bcc)-Tantalum or Beta-Tantalum Films," J. Electrochem. Soc.: Solid-State Science and Technology, vol. 124, No. 1, pp. 123-131 (Jan. 1977).
Pearson's Handbook of Crystallographic Data for Intermetallic Phases vol. 3, American Society for Metals, pp. 3218, 2791 and 2792.
Binary Alloy Phase Diagrams, Second Edition, American Society for Metals, Ta-N Phase Diagram, pp. 2703-2704.

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