Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device
Reexamination Certificate
2007-02-27
2007-02-27
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
C257S600000
Reexamination Certificate
active
11004877
ABSTRACT:
A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various dopants at various energy levels. Accordingly, unit-to-unit device variation is reduced because etching, growing, and deposition processes to make the active portion of the varactor are reduced or eliminated. The resulting HA junction has a more uniform thickness, and a more uniform doping profile.
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Coolbaugh Douglas D.
Furkay Stephen S.
Johnson Jeffrey B.
Rassel Robert M.
Sheridan David C.
Canale Anthony J.
International Business Machines - Corporation
Prenty Mark V.
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