Structure and method of forming metal buffering layer

Details Structure and method of forming metal buffering layer Structure and method of forming metal buffering layer

2005-05-20

2008-12-16

Sarkar, Asok K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S786000, C257SE23146

Reexamination Certificate

active

07466031

ABSTRACT:
A structure and method of forming a metal buffering layer during the formation of a redistribution layer is provided. It only changes a mask to form the metal buffering layer and circuit traces simultaneously. The metal buffering layer can increase the flatness of the dielectric layer covering on the metal buffering layer. It can also make the structure under the metal buffering layers suffer uniform pressure to prevent the passivation layer from cracking and the circuit traces from collapsing in order to increase the yield of the packaged chips.

REFERENCES:
patent: 2003/0067077 (2003-04-01), Lee
patent: 2004/0040855 (2004-03-01), Batinovich
patent: 2004/0115925 (2004-06-01), Tseng et al.
patent: 2004/0222478 (2004-11-01), Zhang et al.
patent: 2005/0085062 (2005-04-01), Kim
patent: 2005/0104208 (2005-05-01), Bartelo et al.

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