Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-08-08
2006-08-08
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C438S320000
Reexamination Certificate
active
07087940
ABSTRACT:
A bipolar transistor structure and method of making the bipolar transistor are provided. The bipolar transistor includes a collector region, an intrinsic base layer overlying the collector region, and an emitter overlying the intrinsic base layer. An opened etch stop layer includes a layer of dielectric material overlying the intrinsic base, the opened etch stop layer self-aligned to the emitter. The bipolar transistor further includes a raised extrinsic base self-aligned to the emitter, the raised extrinsic base overlying the intrinsic base layer.
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Khater Marwan H.
Pagette Francois
International Business Machines - Corporation
Neff Daryl K.
Pert Evan
Schnurmann H. Daniel
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