Structure and method of forming a bipolar transistor having...

Details Structure and method of forming a bipolar transistor having... Structure and method of forming a bipolar transistor having...

2005-12-06

2005-12-06

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000, C257S200000, C438S235000, C438S309000, C438S312000

Reexamination Certificate

active

06972443

ABSTRACT:
A bipolar transistor is provided which includes a collector region, an intrinsic base layer including a single-crystal semiconductor overlying the collector region, and an emitter disposed within a first opening overlying the intrinsic base layer. The bipolar transistor includes a raised extrinsic base, which in turn includes a raised extrinsic base layer and a link-up region which electrically connects the raised extrinsic base layer to the intrinsic base layer. The link-up region also self-aligns the raised extrinsic base to the emitter. The link-up region is disposed in a second opening separate from the first opening and in an undercut region extending from the second opening below the raised extrinsic base layer.

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