Structure and method of forming a bipolar transistor having...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure

Reexamination Certificate

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C438S205000, C438S313000, C438S340000

Reexamination Certificate

active

06940149

ABSTRACT:
Structure and a method are provided for making a bipolar transistor, the bipolar transistor including a collector, an intrinsic base overlying the collector, an emitter overlying the intrinsic base, and an extrinsic base spaced from the emitter by a gap, the gap including at least one of an air gap and a vacuum void.

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