Structure and method of correcting proximity effects in a...

Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system

Reexamination Certificate

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C716S030000, C716S030000, C430S005000, C359S290000

Reexamination Certificate

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10658933

ABSTRACT:
A structure and method are provided for correcting the optical proximity effects on a tri-tone attenuated phase-shifting mask. An attenuated rim, formed by an opaque region and an attenuated phase-shifting region, can be kept at a predetermined width across the mask or for certain types of structures. Typically, the attenuated rim is made as large as possible to maximize the effect of the attenuated phase-shifting region while still preventing the printing of larger portions of the attenuated phase-shifting region during the development process.

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Kachwala et al□□High Transmission Attenuated PSM—Benefits and Limitations through a Validation Study of 33%, 205 and 6% Transmission Masks□□Optical Microlithography XIII, Feb. 27- Mar. 3, 2000, Santa Clara, California, USA.

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