Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-04-30
1994-02-08
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257436, 257455, 257457, 257448, 257449, H01L 2944, H01L 2948, H01L 3106
Patent
active
052850986
ABSTRACT:
A method and structure are provided for internal photoemission detection. At least one groove (30a) is formed in a side of a semiconductor layer (32). A silicide film (58) is formed in each groove (30a) over the semiconductor layer (32). A metal contact region (44) is electrically coupled to the silicide film (58) such that a voltage at the metal contact region (44) indicates an intensity of radiation incident on the structure (28).
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Donaldson Richard L.
Jackson Jerome
Kesterson James C.
Stoltz Richard A.
Texas Instruments Incorporated
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