Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-09
2011-08-09
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE23175, C438S758000
Reexamination Certificate
active
07994509
ABSTRACT:
Provided is a thin film device and an associated method of making a thin film device. For example, fabrication of an inverter thin film device is described. Moreover, a parallel spaced electrically conductive strips are provided upon a substrate. A functional material is deposited upon the conductive strips. A 3D structure is then provided upon the functional material, the 3D structure having a plurality of different heights, at least one height defining a first portion of the conductive strips to be bundled. The 3D structure and functional material are then etched to define a TFD disposed above the first portion of the conductive strips. The first portion of the conductive strips is bundled adjacent to the TFD.
REFERENCES:
patent: 3525617 (1970-08-01), Bingham
patent: 6028333 (2000-02-01), Yamazaki et al.
patent: 6184559 (2001-02-01), Hayakawa et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6351841 (2002-02-01), Tickle
patent: 6385075 (2002-05-01), Taussig et al.
patent: 6476419 (2002-11-01), Yasuda
patent: 6593624 (2003-07-01), Walker
patent: 6808646 (2004-10-01), Jeans
patent: 7056834 (2006-06-01), Mei et al.
patent: 7341893 (2008-03-01), Mei et al.
patent: 2004/0002216 (2004-01-01), Taussig et al.
patent: 2004/0217085 (2004-11-01), Jeans
patent: 2004/0235227 (2004-11-01), Kawase
patent: 2005/0161832 (2005-07-01), Saeki
patent: 2006/0017154 (2006-01-01), Eguchi et al.
Luo Hao
Mei Ping
Taussig Carl
Hewlett--Packard Development Company, L.P.
Kraig William F
Le Thao X
LandOfFree
Structure and method for thin film device with stranded... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure and method for thin film device with stranded..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for thin film device with stranded... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2767448