Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-03-22
2011-03-22
Ghyka, Alexander G (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S347000, C257SE29070, C257S021000
Reexamination Certificate
active
07910917
ABSTRACT:
A microelectronic device provided with one or more quantum wires, able to form one or more transistor channels, and optimized in terms of arrangement, shape, and/or composition. A method for fabricating the device includes forming, in one or more thin layers resting on a support, a first block and a second block in which at least one transistor drain region and at least one transistor source region are respectively intended to be formed, forming a structure connecting the first block to the second block, and forming, on the surface of the structure, wires connecting a first region of the first block with another region of the second block that faces the first region.
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Borel Stephan
Ernst Thomas
Commissariat a l''Energie Atomique
Ghyka Alexander G
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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