Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-05-26
2009-02-24
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S700000, C257SE21522
Reexamination Certificate
active
07494930
ABSTRACT:
A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.
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Liu Hang Yip
Schafbauer Thomas
Schmidt Sebastian
Wei Yayi
Infineon - Technologies AG
Lee Hsien-ming
Slater & Matsil L.L.P.
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