Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2011-01-11
2011-01-11
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C438S427000, C438S633000, C438S692000
Reexamination Certificate
active
07868427
ABSTRACT:
A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.
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Liu Hang-Yip
Schafbauer Thomas
Schmidt Sebastian
Wei Yayi
Brewster William M.
Infineon - Technologies AG
Slater & Matsil L.L.P.
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