Structure and method for manufacturing trench capacitance

Details Structure and method for manufacturing trench capacitance Structure and method for manufacturing trench capacitance

2008-08-14

2010-12-28

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S386000

Reexamination Certificate

active

07858485

ABSTRACT:
A deep trench (DT) capacitor comprises a trench in a silicon layer, a buried plate surrounding the trench, a dielectric layer lining the trench, and a node conductor in the trench. The top surface of the poly node is higher than the surface of the silicon layer, so that it is high enough to ensure that a nitride liner used as a CMP etch stop for STI oxide surrounding a top portion of the poly node will be higher than the STI oxide, so that the nitride liner can be removed prior to forming a silicide contact on top of the poly node.

REFERENCES:
patent: 6008104 (1999-12-01), Schrems
patent: 6281069 (2001-08-01), Wu et al.
patent: 6355518 (2002-03-01), Wu et al.
patent: 6509599 (2003-01-01), Wurster et al.
patent: 6841443 (2005-01-01), Temmler et al.
patent: 7256439 (2007-08-01), Cheng et al.
patent: 2001/0038112 (2001-11-01), Gambino et al.
patent: 2005/0127422 (2005-06-01), Hsiao et al.
patent: 2007/0235792 (2007-10-01), Kwon et al.

Affiliated with

Also associated with

Rating

Structure and method for manufacturing trench capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and method for manufacturing trench capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for manufacturing trench capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4159268