Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-04-05
2011-04-05
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
Reexamination Certificate
active
07919387
ABSTRACT:
The present invention provides a memory device including at least two of a first dielectric on a semiconductor substrate; a floating gates corresponding to each of the at least two gate oxides; a second dielectric on the floating gates; a control gate conductor formed atop the second gate oxide; source and drain regions present in portions of the semiconducting substrate that are adjacent to each portion of the semiconducting substrate that is underlying the at least two of the first gate oxide, wherein the source and drain regions define a length of a channel positioned therebetween; and a low-k dielectric material that is at least present between adjacent floating gates of the floating gates corresponding to each of the at least two gate oxides, wherein the low-k dielectric material is present along a direction perpendicular to the length of the channel positioned therebetween.
REFERENCES:
patent: 5966597 (1999-10-01), Wright
patent: 5973354 (1999-10-01), Chang
patent: 6236094 (2001-05-01), Wright
patent: 6875660 (2005-04-01), Hung et al.
patent: 2004/0105319 (2004-06-01), Jeng et al.
patent: 2005/0224860 (2005-10-01), Hendriks et al.
patent: 2006/0194390 (2006-08-01), Imai et al.
patent: 2006/0226474 (2006-10-01), Ho et al.
patent: 2006/0263978 (2006-11-01), Wang et al.
patent: 2007/0029600 (2007-02-01), Cohen
patent: 2007/0122971 (2007-05-01), Dobuzinsky et al.
patent: 2008/0213969 (2008-09-01), Seo
Quirk, Michael, et al. Semiconductor Manufacturing Technology. Upper Saddle River: Prentice-Hall, Inc. 2001. ISBN#0-13-081520-9. pp. 280-283.
International Business Machines - Corporation
Kusumakar Karen M
Lebentritt Michael S
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Structure and method for manufacturing memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure and method for manufacturing memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for manufacturing memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2734854