Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-01-03
2006-01-03
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S197000
Reexamination Certificate
active
06982442
ABSTRACT:
A heterojunction bipolar transistor (HBT) and method of making an HBT are provided. The HBT includes a collector, and an intrinsic base overlying the collector. The intrinsic base includes a layer of a single-crystal semiconductor alloy. The HBT further includes a raised extrinsic base having a first semiconductive layer overlying the intrinsic base and a second semiconductive layer formed on the first semiconductive layer. An emitter overlies the intrinsic base, and is disposed in an opening of the first and second semiconductive layers, such that the raised extrinsic base is self-aligned to the emitter.
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Chan Kevin K.
Khater Marwan H.
Schonenberg Kathryn T.
Siddhartha Panda
Jackson Jerome
Neff Daryl K.
Schnurmann H. Daniel
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