Structure and method for low current programming of flash EEPROM

Details Structure and method for low current programming of flash EEPROM Structure and method for low current programming of flash EEPROM

1995-08-31

1996-09-03

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518524, 395430, G11C 700

Patent

active

055530206

ABSTRACT:
A system and method for programming non-volatile memory enables fast low current programming. Low current programming is achieved by applying a source bias voltage and increasing the drain voltage to be greater than the source bias voltage to maintain fast programming. Furthermore, the control gate voltage may be stepped or ramped from a minimum value to a maximum value to further reduce the peak channel current and to allow the flash cell threshold voltage to be placed to an exact value, for MLC applications. Ramping or stepping of the control gate may be done independently or in conjunction with an applied source bias voltage. Furthermore, the reduced cell current allows more cells to be programmed in parallel which improves program performance and the drain select device can be reduced in size to reduce die area.

REFERENCES:
patent: 5042009 (1991-08-01), Kazerounian et al.
patent: 5132935 (1992-07-01), Ashmore, Jr.
patent: 5218571 (1993-06-01), Norris
patent: 5258949 (1993-11-01), Chang et al.
patent: 5289401 (1994-02-01), Shima
patent: 5339270 (1994-08-01), Jiang
patent: 5341342 (1994-08-01), Brahmbhatt
patent: 5349220 (1994-09-01), Hong
patent: 5361235 (1994-11-01), Kodama

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