Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-01-23
2007-01-23
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S213000, C257S288000, C257S368000, C257S499000, C257S528000, C257S536000, C257SE27009, C257S903000, C257S904000, C438S142000, C438S197000, C438S199000, C438S200000, C438S210000
Reexamination Certificate
active
10708023
ABSTRACT:
A method and system for forming a semiconductor device having superior ESD protection characteristics. A resistive material layer is disposed within a contact hole on at least one of the contact stud upper and lower surface. In preferred embodiments, the integral resistor has a resistance value of between about one Ohm and about ten Ohms, or between 10 and 100 Ohms. Embodiments of the resistive layer include sputtered silicon material, a tunnel oxide, a tunnel nitride, a silicon-implanted oxide, a silicon-implanted nitride, or an amorphous polysilicon. Embodiments of the invention include SRAMs, bipolar transistors, SOI lateral diodes, MOSFETs and SiGe Transistors.
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“Vertically Integrated Load Resistor for MOS Static RAM Cells”, IBM Technical Disclosure Bulletin, vol. 26, No. 10B, Mar. 1984, pp. 5675-5677.
Gill Jason P.
Hook Terence B.
Mann Randy W.
Murphy William J.
Tonti William R.
Daugherty Patrick J.
Driggs, Hogg & Fry Co. LPA
Flynn Nathan J.
International Business Machines - Corporation
Quinto Kevin
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